FW163 no. a0349-1/4 features ? low on-resistance. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 7 a drain current (pw 10s) i d duty cycle 1% --9 a drain current (pw 100ms) i d duty cycle 1% --14 a drain current (pw 10 m s) i dp duty cycle 1% --36 a allowable power dissipation p d mounted on a ceramic board (1200mm 2 5 0.8mm) 1unit, pw 10s 1.7 w total dissipation p t mounted on a ceramic board (1200mm 2 5 0.8mm), pw 10s 2.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.0 --2.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--7a 8.4 14 s r ds (on)1 i d =--7a, v gs =--10v 19 25 m w static drain-to-source on-state resistance r ds (on)2 i d =--4a, v gs =--4.5v 27 39 m w r ds (on)3 i d =--4a, v gs =--4v 31 45 m w input capacitance ciss v ds =--10v, f=1mhz 2500 pf output capacitance coss v ds =--10v, f=1mhz 460 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 370 pf marking : w163 continued on next page. ordering number : ena0349 72606 / 32406pa ms im tb-00001036 FW163 p-channel silicon mosfet general-purpose switching device applications sanyo semiconductors data sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
FW163 no. a0349-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 28 ns rise time t r see specified test circuit. 150 ns turn-off delay time t d (off) see specified test circuit. 160 ns fall time t f see specified test circuit. 95 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--7a 47 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--7a 7 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--7a 9 nc diode forward voltage v sd i s =--7a, v gs =0v --0.82 --1.5 v package dimensions switching time test circuit unit : mm 7005-003 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it10776 it10777 0 --3.5 --0.5 0 0 -- 7 -- 6 -- 5 -- 4 -- 3 --1.0 --0.2 --0.3 --0.4 --0.1 --0.5 --0.6 --0.7 --0.8 --0.9 -- 2 -- 1 0 --10 --1.0 --1.5 --2.0 --2.5 --3.0 -- 8 -- 6 -- 4 -- 2 --10.0v -- 6.0v --4.5 v --8.0v --4.0v v gs = --2.5v --25 c 25 c ta=75 c v ds = --10v --5.0v pw=10 m s d.c. 1% p. g 50 w g s d i d = --7a r l =2.14 w v dd = --15v v out FW163 v in 0v --10v v in
FW163 no. a0349-3/4 0 100 1000 7 5 3 2 7 5 3 2 --30 --5 --15 --20 --25 --10 it10783 it10782 it10781 --0.4 --0.5 --0.6 --0.7 --0.9 --0.8 --1.0 --1.1 --0.001 --0.01 2 7 5 3 2 --0.1 2 7 5 3 --1.0 2 7 5 3 --10 7 5 3 it10780 25 c --25 c f=1mhz ciss coss crss ta=75 c --0.1 --1.0 23 57 23 57 2 --10 3 5 10 7 2 3 5 7 2 3 5 1.0 v ds = -- 10v ta= --25 c 75 c v gs =0v 100 10 3 2 5 3 2 5 7 --0.1 --1.0 2 23 57 --10 2 33 57 v dd = -- 15v v gs = -- 10v t d (off) t f t r t d (on) --100 --10 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --0.01 --0.1 23 23 57 23 57 23 57 --0.01 --0.1 --1.0 --10 5 it10785 it10784 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 50 20 30 35 40 45 25 --10 -- 9 51015 v ds = --10v i d = --7a 10 m s operation in this area is limited by r ds (on). 1ms 10ms 10s 100ms i d = --7a i dp = --36a dc operation 25 c i s -- v sd diode forward voltage, v sd -- v drain current, i d -- a ? y fs ? -- i d forward transfer admittance, ? y fs ? -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (1200mm 2 5 0.8mm) 1unit source current, i s -- a r ds (on) -- v gs gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m w ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m w it10778 it10779 0 0 70 50 --16 --2 --4 --6 --8 --10 --12 --60 --40 --20 0 20 40 60 80 100 120 140 160 --14 40 60 20 10 30 0 50 40 20 10 30 45 35 25 15 5 i d = -- 4 a, v gs = --4.5 v i d = -- 4 a, v gs = --4.0 v ta=25 c i d = -- 4a -- 7a i d = -- 7 a, v gs = --10.0 v
FW163 no. a0349-4/4 ps note on usage : since the FW163 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. 0 0 20 40 60 80 100 120 1.5 1.0 0.5 2.5 2.0 1.7 140 160 it10786 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.8 1.7 1.6 1.4 1.2 1.0 0.6 0.4 0.2 0.8 2.0 2.0 it10787 allowable power dissipation (fet 2), p d -- w allowable power dissipation, p d -- w allowable power dissipation (fet 1), p d -- w p d (fet 1) -- p d (fet 2) mounted on a ceramic board (1200mm 2 5 0.8mm), pw 10s total dissipation mounted on a ceramic board (1200mm 2 5 0.8mm), pw 10s 1unit p d -- ta ambient temperature, ta -- c this catalog provides information as of march, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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